Kestrel Releases
Native .deb, .rpm and homebrew packages. Bash completion and man pages for Linux and macOS. A warning is displayed if an empty password is used. Updated cryptography depdendency version.
Tool base consolidates for 16 nm FinFET design at TSMC ...
Apr 15, 2014 · Cadence Design Systems has announced its digital, custom and signoff tools have received V1.0 Design Rule Manual (DRM) and SPICE certification for TSMC’s 16nm FinFET process, enabling joint customers to begin taping out FinFET-based designs using Cadence tools.
ATopTech’s Aprisa and Apogee Physical Implementation Tools
ATopTech, a leader in next generation physical design solutions, continued their ongoing collaboration with TSMC to optimize ATopTech physical implementation tools to support advanced designs in TSMC 16nm FinFET (16FF).
Cadence Digital and Custom/Analog Tools Achieve TSMC V1.0 …
Apr 15, 2014 · Cadence today announced its digital, custom and signoff tools have received V1.0 Design Rule Manual (DRM) and SPICE certification for TSMC’s 16nm FinFET process, enabling joint customers to begin taping out FinFET-based designs using Cadence® tools.
7nm FinFET Asynchronous Dynamic Comparator IP - GitHub
In this project, we adapt this Strong Arm Latch architecture using the ASAP7 FinFET technology for improved performance metrics at the 7nm scale, ensuring lower power consumption and faster switching speeds than traditional CMOS designs.
doubt regarding FINFET netlist in HSpice - Forum for Electronics
Jan 11, 2011 · "v1 Vdd 0 2.5" means a voltage source with name "v1" between the nodes "Vdd" (pos.) and "0" (neg.) with a default value of 2.5V . (The default value is valid, if v1 is not changed in a SWEEP statement, like this is done in the .DC statement.) Similar for "v3".
GitHub - marg-tools/FN-McPAT: FN-McPAT for FinFET-based and …
FN-McPAT for FinFET-based and NCFET-based systems. Contribute to marg-tools/FN-McPAT development by creating an account on GitHub.
[SOLVED] I need an example of a finfet code in hspice
Sep 21, 2015 · Can I use this same FinFET model for LNA and Mixer simulation? If anyone did the FinFET I-V characteristics, pls suggest me. I want to plot a graph Id- Vg1 for different Vg2 in cadence. Not open for further replies.
32/28nm tool used to demonstrated 50nm fin pitch by spacer pitch halving technique. 1. Technology Considerations. 2. Spice Modeling. 3. Design Methodology and CAD Tools. 4. Digital Design. 5. SRAM. 6. Analog & Mixed-Signal, RF. 7. Conclusion. Model Availability: A versatile model for double-gate, triple-gate, even cylindrical gate FET.
May 7, 2020 · Abstract—This paper proposes a new procedure for the design of a two-stage (Miller) CMOS operational amplifier in 16 nm FinFET technology based on gm/ID methodology.