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Abstract: We discuss the transition to Ti based silicides for source-drain (SD) contacts for 3D FinFET devices starting from the 14nm node & beyond. Reductions in n-FET & p-FET contact resistances are ...
We may receive a commission on purchases made from links. Texas Instruments graphing calculators have helped many a student with algebra, pre-calculus and upside-down anatomical slang. Now, the ...