AXT Inc of Fremont, CA, USA — which makes gallium arsenide (GaAs), indium phosphide (InP) and germanium (Ge) substrates and raw materials at plants in China — says that its majority-owned China-based ...
Incentives to accelerate R&D on vertical GaN power transistors, unlock domestic production, and strengthen US in power infrastructure for AI and HPC ...
Seoul Viosys begins mass production of rare-earth-free white light emitter, with chips as small as 10µm. For three decades, ...
Cadmium telluride (CdTe) thin-film photovoltaic (PV) module maker First Solar Inc of Tempe, AZ, USA has inaugurated the first ...
Red GaN LED external quantum efficiency at 20.8%. University of California Santa Barbara (UCSB) in the USA reports work on ...
Cadmium telluride (CdTe) thin-film photovoltaic (PV) module maker First Solar Inc of Tempe, AZ, USA has signed a non-exclusive licensing agreement granting it access to the issued and pending US ...
EPC adds two three-phase inverter evaluation platforms to 100V GaN motor drive portfolio. Efficient Power Conversion Corp ...
Infineon Technologies AG of Munich, Germany is establishing the world’s first high-volume manufacturing facility for gallium nitride (GaN) power semiconductors on 300mm wafers in Europe. As part of ...
Marktech and Optrans expand quad InGaAs PIN photodiode portfolio from 1.7µm to 2.6µm ...
Results that may be inaccessible to you are currently showing.
Hide inaccessible results